From 5 g first towards "Beyond 5 g ~" evolving "GaN HEMT" the status quo of ~

The larger the diameter, 1 piece of wafer can be cut into the more chips.Through wafer of large diameter, to achieve the low cost, it is a big problem for high production of the early."GaN HEMT" starts from the 2 "wafer production, then implements the 3 inches production in 2007, in 2011 achieved 4 inches.But wafer production process contains about 100 process, change diameter means reassemble all the equipment and materials.People to overcome the problem one by one, to optimize the production process continuously.One of team members, dedicated to the subject is now affiliated to the SEDI both production technology of pine.

Because of "GaN HEMT" low power consumption advantage, the price effect of the base station also began to emerge, gradually penetrate into the market.Adopted the "GaN HEMT" communication operators actual experience the character of high power, high speed and low power consumption, these features cognition by the market, the market also began circulating "monster level device" evaluation and so on.Communications standards evolve from 3 g to 4 g, the bandwidth required also expands unceasingly, the world ushered in the era of high speed large capacity, at the same time, "GaN HEMT" quickly took the market support.The main reason is that it is of great help to promote base station "downsizing".Because of "GaN HEMT" low power consumption, less heat, and do not need air cooling fan and other components, so it is helpful to realize the miniaturization of base station and lightweight.In this way, the setting of the base station is also becoming more easily, can be set up base station sites also have widened, known as "Remote Radio Head" small stations began to increase rapidly.In addition, "GaN HEMT" is also used to ground wave digital broadcasting transmitter, and is used in clear sky tower broadcasting station.In 2013, "GaN HEMT" in countries outside Japan began to expand demand, accompanied by, ushered in the explosive growth.The following year (2014), because of various achievements in the field of information and communication, "GaN HEMT" won the Japanese technology management/innovation category of "'s science minister prize ".

Known as the first year of 5 g today, "GaN HEMT" and "Si LDMOS -" as a base station with transistors, are competing in the market.As a base station with the transistor, SEDI "GaN HEMT" has the top market share, in 2019, was already close to "Si - LDMOS" supplier's market share.Although sales promotion smoothly, but the situation is not optimism."Si - LDMOS" manufacturers around the world see "GaN HEMT" will become the market mainstream, so take the pursuit of SEDI offensive.In the process, to realize the differentiation, it must implement the "GaN HEMT" one's own evolution.Was responsible for the subject of one of the researchers, is sumitomo electric transmission device really wall YongFu research institute of electronic device.True wall part is a part of the development of "GaN HEMT" of the core technology, the technology of membrane crystallization growth.

After entering the 5 g era ", in the high frequency components, components of refinement will accelerate further, need to develop suitable for the crystallization of its structure, it is very important.The structure of the existing GaN HEMT is GaN (gallium nitride) and AlGaN (aluminum gallium nitride) the crystalline phase of overlap, producing electrons on the joint interface.GaN have a little fun, that is, by controlling the Al (aluminum) and Ga (gallium) and the ratio of film thickness and other factors, can dramatically change the device running state.Study the characteristics of this part since needless to say, my main task is to explore the meet the needs of production and cost advantage new GaN HEMT crystal."Wall (true)

And true wall belongs to the same transmission device is responsible for the 5 g wireless research institute of chrysanthemum ChiXian "GaN HEMT" chip operation analysis and modeling work.

"Different customers and applications, the requirements are different to the device.My function is to induce the device in actual operation when the base station can be envisaged that the risks and problems, and developers to feedback to the device.To achieve this, how to develop evaluation technique and simulation technique is a very important research topic., so to speak, GaN HEMT potential is very large, there are still great room for development.I with the development of crystal growth and related technical personnel and play a role of bridge between product design personnel, committed to the rapid development of propulsion device."(Mr. Kikuchi)

In advance of these measures at the same time, the ruling over the wafer inoue mentioned above the development of the production process are parallel.

"GaN HEMT is suitable for the high band, you must make their production processes to further refinement.For example, with the nanoscale electrode, and USES the thinner AlGaN layer and GaN layer.Semiconductor processing need huge energy, however, to the pursuit of refinement of HEMT and thin layer, and its processing energy products will lead to damage, this is also a big problem.We are developing can solve the production process of the subject.We bet is Beyond 5 g communication technology.The band is also more than 28 GHZ millimeter wave band.High band use expanded, also means that the device itself become thinner and more sophisticated, in this context, the production process will further highlight the importance of the development work."(inoue)