For electronic components to realize high speed and large capacity information communication ~ for quality improvement of the advanced technique of ~
"5 g era" indispensable electronic components GaN HEMT
As represented by phone mobile communication, since the spring of 2020 Japanese operators for part of the group with 5 g commercial service.The high speed large capacity, low latency and more connectivity features, brought great changes to life and society.For 5 g, it can realize high-speed high-power transistors with low-power electrical signal processing the electronic component is indispensable.Sumitomo electric group from the earlier period will focus on the future of information and communication, and began to explore the new electronic components.Developers focus on compared with ordinary silicon materials with good physical properties of GaN (gallium nitride) this material, with HEMT (High Electron Mobility Transistor/High Electron Mobility Transistor) combined, eventually developed both recommend suite and high-power GaN HEMT.Sumitomo electric group in 2007 will be put into the market, then by customers for 3 g base station, is highly evaluated by the market.Then in view of 4 g, 5 g evolution to date.In the development of such the analytical research has made a great contribution.
In manufacturing process
Analytical research of yokohama research backbone saito ji guang entering since 16 years have been engaged in components development, use its experience for all kinds of parsing.The subject of the component manufacturing is one of quality is uneven.Because, after numerous process component features will be subtle change.In addition, about GaN HEMT manufacturing process, in short in the circuit board, through epitaxial growth (single crystal to grow under the same crystal phenomenon) technology, make the GaN (gallium nitride) and AlGaN (aluminum gallium nitride) single crystal grow, finally attach electrodes.
"One of our work is to find out the cause of quality is uneven.The manufacturing process, have more than one process may cause as gallium nitride material damage.Our task is to find out what damage.For example, for nitrogen (N) and gallium (Ga) of gallium nitride compounds, requires evaluation and identification of its structure deviation, GaN surface oxidation, mixed with impurities and crystal structure disorders and other damage.The characteristics of the GaN HEMT give hope, and the damage will cause the GaN HEMT degradation features appeared, so you must find out the reason.Based on the analytical results, in the manufacture field optimization condition, finally to improve and promote quality.In addition to manufacturing, to boost the development of product characteristics (such as, analytical technology has also played a role.In crystal structure, from the atomic level, jp bird habitat city jiuzhou synchrotron light dedicated synchrotron radiation research center set up experimental facilities - sumitomo electric BeamLine played a tremendous power.It has become sumitomo electric competition with other companies to form one of the elements of differentiation."(saito)
Synchrotron radiation and the accumulation of luminous effect analysis technique for many years
Saito mentioned "synchrotron radiation" means: with large accelerator to produce very strong artificial ray, is a kind of distortion with the magnet close to the speed of light to the movement of electronic radiation when the direction of long and thin and strong electromagnetic wave (X-ray).The very short wave lengths of the X-ray irradiation to the material, material will be a variety of signals.Through analyzing these signals, can from the atomic level analysis of the structure and properties of materials.Because can use high intensity X-ray synchrotron radiation facilities (a small device for 10000 times to 100 million times), so it can realize in detailed analysis.Sumitomo electric最初使用的是位于兵库县的全世界最高性能同步辐射设施“SPring‐8”等的共用BeamLine,后来在佐贺县鸟栖市设置了公司内部专用BeamLine,并于2016年11月开始运行,可满足以元件为首的多种分析需求。横滨研究部的主查米村卓巳曾在入职后的一段时间内,参与同步辐射分析工作。为有效运用同步辐射,现在米村正在研究被称为“光致发光”的分析手法。
"After irradiation light (laser) substances or materials, produce light when they are excited electronic return to ground state, and photoluminescence is observed to the light.The light easily affected by material defects or impurities, parsing the spectra obtained as a result, it can obtain information about physical defects or impurities.As GaN HEMT technology one of damage evaluation technique, can be based on the defects shown in photoluminescence and other related information, using synchrotron radiation and transmission electron microscopy (tem) to find out what is the defect on what the product characteristics.Development of this kind of resolution and analysis technique is focused on - work closely with manufacturing team, predicted a few years later products, to solve the issue in advance the analysis technique and developing new technologies.I believe that such a move is the basis of quality manufacturing business."Village (m)
Qiangqiang cooperation members and analytical research, is developed
Sumitomo electric Device Innovation companies responsible for developing GaN HEMT.With the company technical personnel, on the basis of in-depth cooperation, saito and rice village in push forward relevant countermeasures.One of the staff's quality assurance department of xishan also.Including the transition products, xishan in future will be responsible for the recognition, evaluation and guarantee for the quality of the goods.
"Based on years of accumulation of knowledge, can say GaN HEMT as a product has a very high finish.But in the process of involving the multistep process will appear some defects or problems.At this point, the analytic research became our strong backing.I think the customer can trust us for a long time, is largely thanks to the help of analytical research.Now, with the support of the market, we are to increase at a high speed.I hope with the analytical research to continue in-depth cooperation relationship, provide the market with high performance and high quality GaN HEMT."(dying)
Now, in response to the 5 g for high frequency, high bandwidth, the GaN HEMT refinement analysis put forward further requirements.To have than high power, at the same time, in order to maintain market competitiveness, must also ensure that mass production and cost advantage.Analytical research on GaN HEMT take an important part in the development of further optimization.
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